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Technical
Program
Educational Sessions
Keynote Address
Conference Luncheon
Panel Discussions
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On Tuesday afternoon, September 15, CICC will offer a Panel Discussion titled:
Design of High Performance Radios in Bulk-CMOS, SOI, SiGe or GaAs?
Session 17 - Panel Discussion
Fir Ballroom, Tuesday Afternoon, September 15
4:00 pm - 5:30 pm
Panel Organizers:
Aurangzeb Khan, Everspin Technologies
Alireza Shirvani, Marvell Semiconductor
Panel Moderator: Horacio Mendez, Executive Director, SOI Consortium
Panelists:
Dr. Shayan Farahvash, Senior Engineer, Manager, RF Micro Devices
David Harame, Director of Derivative & Value Added Technology Development, IBM
Jim McMahon, Senior Staff Design Engineer, RF, Cadence
Dr. Jacob Rael, Senior Manager, Broadcom
Thomas Zirkle, Freescale
Semiconductor suppliers need to develop multi-mode and multi-band radio products that meet stringent power dissipation, space and weight constraints as
well as FCC and many other regulations, to take advantage of the rapidly growing market for "mobile/portable/pocketable" devices.
While most of today's chips for multi-mode radios can be designed in bulk CMOS, some demand the use of SiGe, GaAs or other materials.
As higher frequency applications push the power dissipation and band-width limitations of bulk CMOS, SOI has emerged as a cost-effective alternative to bulk
CMOS for an increasing number of RF applications.
The panelists - from semiconductor vendors and an EDA company - will outline these challenges and discuss benefits and trade-offs of the chosen process technologies
and circuit design techniques.
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